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DMOS Electrical Characteristics ( T A = 25 O C unless otherwise noted )
Symbol
Parameter
Conditions
Type
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV DSS
Drain-Source Breakdown Voltage
V GS = 0 V, I D = 250 μA
N-Ch
25
V
V GS = 0 V, I D = -250 μA
P-Ch
-25
? BV DSS / ? T J
Breakdown Voltage Temp. Coefficient
I D = 250 μA, Referenced to 25 o C
N-Ch
25
mV / o C
I D = -250 μA, Referenced to 25 o C
P-Ch
-20
I DSS
Zero Gate Voltage Drain Current
V DS = 20 V, V GS = 0 V,
N-Ch
1
μA
T J = 55°C
10
I DSS
Zero Gate Voltage Drain Current
V DS =-20 V, V GS = 0 V,
P-Ch
-1
μA
T J = 55°C
-10
I GSS
Gate - Body Leakage Current
V GS = 8 V, V DS = 0 V
V GS = -8 V, V DS = 0 V
N-Ch
P-Ch
100
-100
nA
nA
ON CHARACTERISTICS (Note 2)
? V GS(th) / ? T J
Gate Threshold Voltage Temp. Coefficient
I D = 250 μA, Referenced to 25 o C
N-Ch
-2.1
mV / o C
I D = -250 μA, Referenced to 25 C
o
P-Ch
1.9
V GS(th)
Gate Threshold Voltage
V DS = V GS , I D = 250 μA
N-Ch
0.65
0.85
1.5
V
V DS = V GS , I D = -250 μA
P-Ch
-0.65
-1
-1.5
R DS(ON)
Static Drain-Source On-Resistance
V GS = 2.7 V, I D = 0.2 A
N-Ch
3.8
5
?
V GS = 4.5 V, I D = 0.4 A
T J =125°C
6.3
3.1
9
4
V GS = -2.7 V, I D = -0.05 A
V GS = -4.5 V, I D = -0.2 A
T J =125°C
P-Ch
10.6
15
7.9
13
21
10
I D(ON)
On-State Drain Current
V GS = 2.7 V, V DS = 5 V
N-Ch
0.2
A
V GS = -2.7 V, V DS = -5 V
P-Ch
-0.05
g FS
Forward Transconductance
V DS = 5 V, I D = 0.4 A
N-Ch
0.2
S
DYNAMIC CHARACTERISTICS
V DS = -5 V, I D = -0.2 A
P-Ch
0.135
C iss
Input Capacitance
N-Channel
N-Ch
9.5
pF
V DS = 10 V, V GS = 0 V,
f = 1.0 MHz
P-Ch
11
C oss
Output Capacitance
N-Ch
6
pF
C rss
Reverse Transfer Capacitance
P-Channel
V DS = -10 V, V GS = 0 V,
f = 1.0 MHz
P-Ch
N-Ch
7
1.3
pF
P-Ch
1.4
FDC6320C.Rev C
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